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Effective model for MOSFET channel resistance, etc.
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ER Yost
electronics forum beginner


Joined: 27 Jun 2006
Posts: 8

PostPosted: Mon Jul 10, 2006 2:19 pm    Post subject: Effective model for MOSFET channel resistance, etc. Reply with quote

Hello,

Is there anyone who can guide me on what parameters and/or level of
model would be most effective for simulating power dissipation due to
the channel resistance (and other factors) of the MOS? I've been
searching the web for some time and found information about parameters
and levels but very little in the way of suggestions. Any guidance is
appreciated.

ERY
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Jim Thompson
electronics forum Guru


Joined: 06 May 2005
Posts: 5440

PostPosted: Mon Jul 10, 2006 2:39 pm    Post subject: Re: Effective model for MOSFET channel resistance, etc. Reply with quote

On 10 Jul 2006 07:19:28 -0700, "ER Yost" <eryost@gmail.com> wrote:

Quote:
Hello,

Is there anyone who can guide me on what parameters and/or level of
model would be most effective for simulating power dissipation due to
the channel resistance (and other factors) of the MOS? I've been
searching the web for some time and found information about parameters
and levels but very little in the way of suggestions. Any guidance is
appreciated.

ERY

Real(VDS*ID)

...Jim Thompson
--
| James E.Thompson, P.E. | mens |
| Analog Innovations, Inc. | et |
| Analog/Mixed-Signal ASIC's and Discrete Systems | manus |
| Phoenix, Arizona Voice:(480)460-2350 | |
| E-mail Address at Website Fax:(480)460-2142 | Brass Rat |
| http://www.analog-innovations.com | 1962 |

I love to cook with wine. Sometimes I even put it in the food.
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ER Yost
electronics forum beginner


Joined: 27 Jun 2006
Posts: 8

PostPosted: Mon Jul 10, 2006 4:43 pm    Post subject: Re: Effective model for MOSFET channel resistance, etc. Reply with quote

Jim Thompson wrote:
Quote:
On 10 Jul 2006 07:19:28 -0700, "ER Yost" <eryost@gmail.com> wrote:

Hello,

Is there anyone who can guide me on what parameters and/or level of
model would be most effective for simulating power dissipation due to
the channel resistance (and other factors) of the MOS? I've been
searching the web for some time and found information about parameters
and levels but very little in the way of suggestions. Any guidance is
appreciated.

ERY

Real(VDS*ID)

...Jim Thompson


Let me try this again.

Calculating the actual power dissipation isn't what I want to know.
Finding a typical model for a MOSFET is what I'm looking for - like
what LEVEL to use, or what a good value to use for LAMBDA or XJ is -
because all (or at least most) of these parameters modify ID - thus
changing the channel resistance.

I can find a lot of info about, say for example, what the equation
SPICE uses to calculate the threshold voltage and what the default
value for PHI is, but I can't find any suggestions for what a typical
value for CBGO is, etc. etc.

Is this more helpful?

ERY
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Jim Thompson
electronics forum Guru


Joined: 06 May 2005
Posts: 5440

PostPosted: Mon Jul 10, 2006 4:49 pm    Post subject: Re: Effective model for MOSFET channel resistance, etc. Reply with quote

On 10 Jul 2006 09:43:28 -0700, "ER Yost" <eryost@gmail.com> wrote:

Quote:
Jim Thompson wrote:
On 10 Jul 2006 07:19:28 -0700, "ER Yost" <eryost@gmail.com> wrote:

Hello,

Is there anyone who can guide me on what parameters and/or level of
model would be most effective for simulating power dissipation due to
the channel resistance (and other factors) of the MOS? I've been
searching the web for some time and found information about parameters
and levels but very little in the way of suggestions. Any guidance is
appreciated.

ERY

Real(VDS*ID)

...Jim Thompson


Let me try this again.

Calculating the actual power dissipation isn't what I want to know.
Finding a typical model for a MOSFET is what I'm looking for - like
what LEVEL to use, or what a good value to use for LAMBDA or XJ is -
because all (or at least most) of these parameters modify ID - thus
changing the channel resistance.

I can find a lot of info about, say for example, what the equation
SPICE uses to calculate the threshold voltage and what the default
value for PHI is, but I can't find any suggestions for what a typical
value for CBGO is, etc. etc.

Is this more helpful?

ERY

Surf back thru Usenet looking for references to 2N7000, which Win Hill
has modeled.

Win has taken a crap Level=3 model and added a subcircuit to make it
more accurate.

My preference is Level=7, but it's rare to find discrete devices
modeled that way.

Unfortunately my model repertoire only includes integrated circuit
devices.

...Jim Thompson
--
| James E.Thompson, P.E. | mens |
| Analog Innovations, Inc. | et |
| Analog/Mixed-Signal ASIC's and Discrete Systems | manus |
| Phoenix, Arizona Voice:(480)460-2350 | |
| E-mail Address at Website Fax:(480)460-2142 | Brass Rat |
| http://www.analog-innovations.com | 1962 |

I love to cook with wine. Sometimes I even put it in the food.
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ER Yost
electronics forum beginner


Joined: 27 Jun 2006
Posts: 8

PostPosted: Mon Jul 10, 2006 4:54 pm    Post subject: Re: Effective model for MOSFET channel resistance, etc. Reply with quote

Oh, and one more thing.

There have been a few places where I've found information on power
MOSFETs, but my application leans more on a low voltage analog signal
that can be unity gain or close enough to unity.

Basically, my research involves looking at the power dissipation of
typical CMOS logic versus a differential logic with CMOS that involves
analog signals - I could go more in depth into my research but it's
unnecessary. This 'differential logic' that I'm looking into isn't the
end goal, it's just meant to be a good example of getting energy
savings with a sinusoidal stimulus. Anyway...

Thanks again,

ERY
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ER Yost
electronics forum beginner


Joined: 27 Jun 2006
Posts: 8

PostPosted: Mon Jul 10, 2006 5:26 pm    Post subject: Re: Effective model for MOSFET channel resistance, etc. Reply with quote

Jim,

Thank you.

That right there made my day.

ERY
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